Comparison of InGaSb/InAs superlattice structures grown by MBE on GaSb, GaAs, and compliant GaAs substrates

By Tomich D.   Eyink K.   Grazulis L.   Brown G.   Szmulowicz F.   Mahalingam K.   Seaford M.   Kuo C.   Hwang W.   Lin C.  

Journal of Electronic Materials, Vol. 29, Iss. 7, 2000-07 ,pp. : 940-943

Springer Publishing Company

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Lattice-mismatched InGaAs layers grown by OMVPE on GaAs based compliant substrates

By Vanhollebeke K.   Moerman I.   Daele P.   Demeester P.  

Journal of Electronic Materials, Vol. 29, Iss. 7, 2000-07 ,pp. : 933-939

Springer Publishing Company

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Strain relief by surface undulations of dislocation free MBE grown antimonides on compliant universal GaAs substrates

By Seaford M.   Hesse P.   Tomich D.   Eyink K.  

Journal of Electronic Materials, Vol. 28, Iss. 7, 1999-07 ,pp. : 878-880

Springer Publishing Company

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Low-dislocation relaxed SiGe grown on an effective compliant substrate

By Luo Y.   Liu J.   Jin G.   Wang K.   Moore C.   Goorsky M.   Chih C.   Tu K.  

Journal of Electronic Materials, Vol. 29, Iss. 7, 2000-07 ,pp. : 950-955

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Growth and characterization of GaN thin films on SiC SOI substrates

By Steckl A.   Deveajan J.   Tran C.   Stall R.  

Journal of Electronic Materials, Vol. 26, Iss. 3, 1997-03 ,pp. : 217-223

Springer Publishing Company

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