Structural and Electrical Properties of Unintentionally Doped 4H-SiC Epitaxial Layers—Grown by Hot-Wall CVD

Author： Wagner G.   Thomas B.   Doerschel J.   Dolle J.   Irmscher K.  

Publisher： Springer Publishing Company

ISSN： 1543-186X

Source： Journal of Electronic Materials, Vol.30, Iss.3, 2001-03, pp. : 207-211

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