Microscopic Origin of Electrical Compensation in Arsenic-Doped HgCdTe by Molecular Beam Epitaxy: Density Functional Study

Author: Duan He   Chen Xiaoshuang  

Publisher: Springer Publishing Company

ISSN: 1543-186X

Source: Journal of Electronic Materials, Vol.36, Iss.8, 2007-08, pp. : 890-894

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Abstract