Molecular Beam Epitaxy Growth of HgCdTe on Large-Area Si and CdZnTe Substrates

By Reddy M.  

Journal of Electronic Materials, Vol. 40, Iss. 8, 2011-08 ,pp. : 1706-1716

Springer Publishing Company

Access to resources Recommend Favorite

Surface Structure of Molecular Beam Epitaxy (211)B HgCdTe

By Benson J.D.   Almeida L.A.   Carmody M.W.   Edwall D.D.   Markunas J.K.   Jacobs R.N.   Martinka M.   Lee U.  

Journal of Electronic Materials, Vol. 36, Iss. 8, 2007-08 ,pp. : 949-957

Springer Publishing Company

Access to resources Recommend Favorite

Transmission electron microscopy studies of defects in HgCdTe device structures grown by molecular beam epitaxy

By Zhao Lijie   Speck J.   Rajavel R.   Jensen J.   Leonard D.   Strand T.   Hamilton W.  

Journal of Electronic Materials, Vol. 29, Iss. 6, 2000-06 ,pp. : 732-735

Springer Publishing Company

Access to resources Recommend Favorite

Microscopic Origin of Electrical Compensation in Arsenic-Doped HgCdTe by Molecular Beam Epitaxy: Density Functional Study

By Duan He   Chen Xiaoshuang  

Journal of Electronic Materials, Vol. 36, Iss. 8, 2007-08 ,pp. : 890-894

Springer Publishing Company

Access to resources Recommend Favorite

Molecular beam epitaxial growth of HgCdTe on CdZnTe(311)B

By Aqariden F.   Shih H.   Chandra D.   Liao P.  

Journal of Electronic Materials, Vol. 29, Iss. 6, 2000-06 ,pp. : 727-728

Springer Publishing Company

Access to resources Recommend Favorite