Nonvolatile Memory Effect in Indium Gallium Arsenide-Based Metal–Oxide–Semiconductor Devices Using II–VI Tunnel Insulators

By Chan P.-Y.  

Journal of Electronic Materials, Vol. 40, Iss. 8, 2011-08 ,pp. : 1685-1688

Springer Publishing Company

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Nonvolatile Silicon Memory Using GeO x -Cladded Ge Quantum Dots Self-Assembled on SiO 2 and Lattice-Matched II–VI Tunnel Insulator

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Journal of Electronic Materials, Vol. 40, Iss. 8, 2011-08 ,pp. : 1769-1774

Springer Publishing Company

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Magneto-polaron induced intersubband optical transition in a wide band gap II–VI semiconductor quantum dot

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Journal of Semiconductors, Vol. 36, Iss. 3, 2015-03 ,pp. : 32001-32006

IOP Publishing

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The QD-Flash: a quantum dot-based memory device

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Semiconductor Science and Technology, Vol. 26, Iss. 1, 2011-01 ,pp. : 14026-14032

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Spatial Wavefunction-Switched (SWS) InGaAs FETs with II–VI Gate Insulators

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Journal of Electronic Materials, Vol. 40, Iss. 8, 2011-08 ,pp. : 1717-1726

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