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Springer Publishing Company

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On the Nature of the “Low-Temperature Anomaly” in Metal–Semiconductor Schottky-Barrier Contacts

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Negative Schottky barrier between titanium and n-type Si(001) for low-resistance ohmic contacts

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Electrical and Optical Characterization of Ni/Al 0.3 Ga 0.7 N/GaN Schottky Barrier Diodes

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Journal of Electronic Materials, Vol. 41, Iss. 11, 2012-11 ,pp. : 3017-3020

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Methods of separation of semiconductor devices by reliability with the use of a low-frequency noise and X-ray irradiation

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