Theoretical study of characteristics in GaN metal-semiconductor-metal photodetectors

Publisher： Elsevier

ISSN： 0038-1101

Source： Solid-State Electronics, Vol.47, Iss.10, 2003-10, pp. : 1863-1867

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Improvement of metal-semiconductor-metal GaN photoconductors

By Huang Z. Mott D. Shu P. Chen J. Wickenden D.

Journal of Electronic Materials, Vol. 26, Iss. 3, 1997-03 ,pp. : 330-333

Springer Publishing Company

Access to resources Recommend Favorite

Anisotropic Responsivity of AlGaN Metal–Semiconductor–Metal Photodetectors on Epitaxial Laterally Overgrown AlN/Sapphire Templates

By Brendel M. Knigge A. Brunner F. Einfeldt S. Knauer A. Kueller V. Zeimer U. Weyers M.

Journal of Electronic Materials, Vol. 43, Iss. 4, 2014-04 ,pp. : 833-837

Springer Publishing Company

Access to resources Recommend Favorite

Metal contacts to n-type GaN

By Schmitz A. Ping A. Khan M. Chen Q. Yang J. Adesida I.

Journal of Electronic Materials, Vol. 27, Iss. 4, 1998-04 ,pp. : 255-260

Springer Publishing Company

Access to resources Recommend Favorite

Characteristics of Si 3 N 4 /GaAs metal-lnsulator-semiconductor interfaces with coherent Si/Al 0.3 Ga 0.7 As interlayers

By Park Dae-Gyu Chen Zhi Morkoç Hadis

Journal of Electronic Materials, Vol. 26, Iss. 9, 1997-09 ,pp. : 1076-1082

Springer Publishing Company

Access to resources Recommend Favorite

Optical-beam profiling by field-controlled metal–semiconductor–metal structures

By Kitagawa K.

International Journal of Electronics, Vol. 92, Iss. 10, 2005-10 ,pp. : 595-600

Taylor & Francis Ltd

Access to resources Recommend Favorite