Theoretical study of characteristics in GaN metal-semiconductor-metal photodetectors

By Tian Y.   Chua S.-J.   Wang H.  

Solid-State Electronics, Vol. 47, Iss. 10, 2003-10 ,pp. : 1863-1867

Elsevier

Access to resources Recommend Favorite

Anisotropic Responsivity of AlGaN Metal–Semiconductor–Metal Photodetectors on Epitaxial Laterally Overgrown AlN/Sapphire Templates

By Brendel M.   Knigge A.   Brunner F.   Einfeldt S.   Knauer A.   Kueller V.   Zeimer U.   Weyers M.  

Journal of Electronic Materials, Vol. 43, Iss. 4, 2014-04 ,pp. : 833-837

Springer Publishing Company

Access to resources Recommend Favorite

Metal contacts to n-type GaN

By Schmitz A.   Ping A.   Khan M.   Chen Q.   Yang J.   Adesida I.  

Journal of Electronic Materials, Vol. 27, Iss. 4, 1998-04 ,pp. : 255-260

Springer Publishing Company

Access to resources Recommend Favorite

Optical-beam profiling by field-controlled metal–semiconductor–metal structures

By Kitagawa K.  

International Journal of Electronics, Vol. 92, Iss. 10, 2005-10 ,pp. : 595-600

Taylor & Francis Ltd

Access to resources Recommend Favorite

On laterally spreading of space-charge-region in planar metal-semiconductor-metal structures

By Khunkhao S.   Yasumura Y.   Kitagawa K.   Masui T.   Sato K.  

Solid-State Electronics, Vol. 47, Iss. 10, 2003-10 ,pp. : 1811-1816

Elsevier

Access to resources Recommend Favorite