Implantation and annealing studies of Tm-implanted GaN

By Lorenz K.   Alves E.   Wahl U.   Monteiro T.   Dalmasso S.   Martin R.W.   O'Donnell K.P.   Vianden R.  

Materials Science and Engineering: B, Vol. 105, Iss. 1, 2003-12 ,pp. : 96-99

Elsevier

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Photoluminescence studies of rare earth (Er, Eu, Tm) in situ doped GaN

By Hommerich U.   Nyein E.E.   Lee D.S.   Heikenfeld J.   Steckl A.J.   Zavada J.M.  

Materials Science and Engineering: B, Vol. 105, Iss. 1, 2003-12 ,pp. : 90-95

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Research on the Mn-implanted GaN with ferromagnetism at room temperature

By Xu J.   Li J.   Zhang R.   Xiu X.Q.   Lu D.Q.   Yu H.Q.   Gu S.L.   Shen B.   Shi Y.   Ye Y.D.   Zheng Y.D.  

Optical Materials, Vol. 23, Iss. 1, 2003-07 ,pp. : 163-167

Elsevier

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Optical properties of Yb ions in GaN epilayer

By Jadwisienczak W.M.   Lozykowski H.J.  

Optical Materials, Vol. 23, Iss. 1, 2003-07 ,pp. : 175-181

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Lattice dynamics behavior in GaN doped with Mg, As, Si, and C

By Aouas M.R.   Sekkal W.   Zaoui A.  

Materials Chemistry and Physics, Vol. 83, Iss. 1, 2004-01 ,pp. : 48-53

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