High hole mobility in p-strained Si grown on relaxed SiC virtual substrate by low-pressure chemical vapor deposition

Author： Sun L.   Han P.   Zheng Y.D.   Chen P.   Yan F.   Gu S.L.   Jiang R.L.   Zhu S.M.  

Publisher： Elsevier

ISSN： 0925-3467

Source： Optical Materials, Vol.23, Iss.1, 2003-07, pp. : 109-112

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

SiC heteroepitaxial growth by low pressure chemical vapor deposition on Si(111) substrates

By Yan F.   Zheng Y.D.   Chen P.   Sun L.   Gu S.L.  

Optical Materials, Vol. 23, Iss. 1, 2003-07 ,pp. : 113-116

Elsevier

Access to resources Recommend Favorite

Surface and interface characteristics of SiC coatings by chemical vapor deposition

By Liu Rong-Jun   Zhang Chang-Rui   Liu Xiao-Yang   Zhou Xin-Gui   Cao Ying-Bin  

Journal of Materials Science, Vol. 40, Iss. 8, 2005-04 ,pp. : 2109-2111

Springer Publishing Company

Access to resources Recommend Favorite

Preparation of SiC-based cellular substrate by pressure-pulsed chemical vapor infiltration into honeycomb-shaped paper preforms

By Ohzawa Y.   Nakane K.   Gupta V.   Nakajima T.  

Journal of Materials Science, Vol. 37, Iss. 12, 2002-06 ,pp. : 2413-2419

Springer Publishing Company

Access to resources Recommend Favorite

Study of plasma etching of -SiC thin films grown on Si-substrate

By Chai C.   Yang Y.   Li Y.   Jia H.  

Optical Materials, Vol. 23, Iss. 1, 2003-07 ,pp. : 103-107

Elsevier

Access to resources Recommend Favorite

Preparation of high-temperature filter by pressure-pulsed chemical vapour infiltration of SiC into carbonized paper-fibre preforms

By Ohzawa Y.   Hoshino H.   Fujikawa M.   Nakane K.   Sugiyama K.  

Journal of Materials Science, Vol. 33, Iss. 21, 1998-11 ,pp. : 5259-5264

Springer Publishing Company

Access to resources Recommend Favorite