Period of time: 2014年3期
Publisher: Springer Publishing Company
Founded in: 1990
Total resources: 58
ISSN: 0957-4522
Subject: TB General Industrial Technology
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Journal of Materials Science: Materials in Electronics,volume 16,issue 3
Menu
Improvement of porous polysilicon nano-structured emitter for vacuum packaged devices
By Lee Joo-Won,Paek Kyeong-Kap,Jang Jin,Ju Byeong-Kwon in (2005)
Journal of Materials Science: Materials in Electronics,volume 16,issue 3 , Vol. 16, Iss. 3, 2005-03 , pp.Spin-valve effect in an FM/Si/FM junction
By Lee K.,Lee H.,Chang J.,Han S.,Kim Y.,Lee W. in (2005)
Journal of Materials Science: Materials in Electronics,volume 16,issue 3 , Vol. 16, Iss. 3, 2005-03 , pp.Superconductors of the BPSCCO system obtained from rapid cooling process
By Carvalho C.,Yukimitu K.,Reynoso V.,Moraes J.,Araüjo E.,Alves N.,Rainho S. in (2005)
Journal of Materials Science: Materials in Electronics,volume 16,issue 3 , Vol. 16, Iss. 3, 2005-03 , pp.By Jünior Adolfo,Shanafield Daniel in (2005)
Journal of Materials Science: Materials in Electronics,volume 16,issue 3 , Vol. 16, Iss. 3, 2005-03 , pp.DC conduction behaviour of niobium doped barium stannate
By Singh Prabhakar,Parkash Om,Kumar Devendra in (2005)
Journal of Materials Science: Materials in Electronics,volume 16,issue 3 , Vol. 16, Iss. 3, 2005-03 , pp.Microwave dielectric properties of Ba5+
By Fang Liang,Chen L.,Zhang Hui,Hong X.,Diao C.,Liu H. in (2005)
Journal of Materials Science: Materials in Electronics,volume 16,issue 3 , Vol. 16, Iss. 3, 2005-03 , pp.By Sharif Ahmed,Chan Y. in (2005)
Journal of Materials Science: Materials in Electronics,volume 16,issue 3 , Vol. 16, Iss. 3, 2005-03 , pp.By Gurunathan K.,Vyawahare N.,Phatak G.,Amalnerkar D. in (2005)
Journal of Materials Science: Materials in Electronics,volume 16,issue 3 , Vol. 16, Iss. 3, 2005-03 , pp.By Rhee H.,Subramanian K.,Lee A. in (2005)
Journal of Materials Science: Materials in Electronics,volume 16,issue 3 , Vol. 16, Iss. 3, 2005-03 , pp.An analysis of the distributions of electronic states associated with hydrogenated amorphous silicon
By Malik Saad,O’Leary Stephen in (2005)
Journal of Materials Science: Materials in Electronics,volume 16,issue 3 , Vol. 16, Iss. 3, 2005-03 , pp.