Analysis of the band offsets between ultrathin GaN(000$ \bar 1 $) layers and sapphire (0001) by photoelectron spectroscopy

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PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Vol. 7, Iss. 2, 2010-02 ,pp. : 268-271

John Wiley & Sons Inc

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The effect of geometrical misfit dislocation on formation of microstructure and photoluminescence of Wurtzite GaN/Al 2 O 3 (0001) films grown by low pressure metal-organic chemical vapor deposition

By Kim K.   Park C.B.  

Thin Solid Films, Vol. 330, Iss. 2, 1998-09 ,pp. : 139-145

Elsevier

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Growth of GaN epitaxial layers on sapphire with preheated ammonia and their structural and optoelectronic properties

By Kim H.J.   Kwon S.-Y.   Yim S.   Na H.   Kee B.   Yoon E.   Kim J.   Park S.-H.   Jeon H.   Kim S.   Seo J.H.   Park K.   Seon M.S.   Sone C.   Nam O.H.   Park Y.  

Current Applied Physics, Vol. 3, Iss. 4, 2003-06 ,pp. : 351-354

Elsevier

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Growth of GaN Layers on Sapphire by Low‐Temperature‐Deposited Buffer Layers and Realization of p‐type GaN by Magesium Doping and Electron Beam Irradiation (Nobel Lecture)

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ANGEWANDTE CHEMIE INTERNATIONAL EDITION, Vol. 54, Iss. 27, 2015-06 ,pp. : 7764-7769

John Wiley & Sons Inc

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Changes in the microstructure of GaN layers on sapphire upon annealing at high pressure

By Domagala J.   Leszczynski M.   Suski T.   Jun J.   Prystawko P.   Teisseyre H.  

Thin Solid Films, Vol. 350, Iss. 1, 1999-08 ,pp. : 295-299

Elsevier

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