ON THE RELIABILITY OF ACCELERATED TESTING IN AlGaAs/InGaAs/GaAs PHEMTs

ISSN： 0882-7516

Source： Active and Passive Electronic Components, Vol.26, Iss.2, 2003-06, pp. : 115-127

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Temperature effects of low noise InGaP/InGaAs/GaAs PHEMTs

By Huang H.K. Wang C.S. Wang Y.H. Wu C.L. Chang C.S.

Solid-State Electronics, Vol. 47, Iss. 11, 2003-11 ,pp. : 1989-1994

Elsevier

Access to resources Recommend Favorite

Enhanced characteristics in gate-recessed and sidewall-recessed AlGaAs/InGaAs PHEMTs by citric-based selective wet etching

By Yarn K. F.

International Journal of Electronics, Vol. 93, Iss. 2, 2006-02 ,pp. : 67-80

Taylor & Francis Ltd

Access to resources Recommend Favorite

Evaluation of the drain—source voltage effect on AlGaAs/InGaAs PHEMTs thermal resistance by the structure function method

By Lin Ma Shiwei Feng Yamin Zhang Bing Deng Yuan Yue

Journal of Semiconductors, Vol. 35, Iss. 9, 2014-09 ,pp. : 94006-94010

IOP Publishing

Access to resources Recommend Favorite

Design of InAlAs/InGaAs PHEMTs and small-signal modeling from 0.5 to 110 GHz

Journal of Semiconductors, Vol. 36, Iss. 2, 2015-02 ,pp. : 24005-24009

IOP Publishing

Access to resources Recommend Favorite

Thermally stable In_0.7Ga_0.3As/In_0.52Al_0.48As pHEMTs using thermally evaporated palladium gate metallization

By Missous Mohamed

Semiconductor Science and Technology, Vol. 29, Iss. 3, 2014-03 ,pp. : 35009-35013

IOP Publishing

Access to resources Recommend Favorite