Role of Dislocation Scattering on the Electron Mobility of n -Type Long Wave Length Infrared HgCdTe on Silicon

By Carmody M.   Edwall D.   Ellsworth J.   Arias J.   Groenert M.   Jacobs R.   Almeida L.A.   Dinan J.H.   Chen Y.   Brill G.   Dhar N.K.  

Journal of Electronic Materials, Vol. 36, Iss. 8, 2007-08 ,pp. : 1098-1105

Springer Publishing Company

Access to resources Recommend Favorite

Design and simulation of a novel GaN based resonant tunneling high electron mobility transistor on a silicon substrate

By Chowdhury Subhra   Chattaraj Swarnabha   Biswas Dhrubes  

Journal of Semiconductors, Vol. 36, Iss. 4, 2015-04 ,pp. : 44001-44004

IOP Publishing

Access to resources Recommend Favorite

Silicon single-electron devices

By Takahashi Yasuo   Fujiwara Akira   Nagase Masao   Namatsu Hideo   Kurihara Kenji   Iwadate Kazumi   Murase Katsumi  

International Journal of Electronics, Vol. 86, Iss. 5, 1999-05 ,pp. : 605-639

Taylor & Francis Ltd

Access to resources Recommend Favorite

Electron-hole drops in dislocational silicon

By Drozdov N.   Fedotov A.  

Microelectronic Engineering, Vol. 66, Iss. 1, 2003-04 ,pp. : 392-399

Elsevier

Access to resources Recommend Favorite

A physically based approach for the calculation of the scattering parameters in high electron mobility transistors

By Ahn Hyungkeun   El Nokali Mahmoud A.  

International Journal of Electronics, Vol. 81, Iss. 2, 1996-08 ,pp. : 149-158

Taylor & Francis Ltd

Access to resources Recommend Favorite