Author： Zhixiong Xiao Tongli Wei
Publisher： Taylor & Francis Ltd
ISSN： 1362-3060
Source： International Journal of Electronics, Vol.82, Iss.3, 1997-03, pp. : 219-226
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Abstract
The Hooge parameter of electrons in heavily phosphorus-doped silicon (N HnD D - 3 18 > 3 10 cm ) is modelled by the Fermi-Dirac distribution function. The main results show that decreases with decreasing temperature when N is about HnD D - 3 18 equal to 5 10 cm , and that decreases with increasing temperature when HnD -3 20 N is higher than 10 cm . is mainly determined by the l/f noise from the D HnD scattering of the electron-ionized impurity at high doping concentrations.
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