An analytical subthreshold current model for ballistic quantum-wire double-gate MOS transistors

Author: Autran J.L.   Munteanu D.   Tintori O.   Decarre E.   Ionescu A.M.  

Publisher: Taylor & Francis Ltd

ISSN: 0892-7022

Source: Molecular Simulation, Vol.31, Iss.2-3, 2005-02, pp. : 179-183

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Abstract