2D-mapping of dopant distribution in deep sub micron CMOS devices by electron holography using adapted FIB-preparation

Author: Lenk Andreas   Lichte Hannes   Muehle Uwe  

Publisher: Oxford University Press

ISSN: 0022-0744

Source: Journal of Electron Microscopy, Vol.54, Iss.4, 2005-08, pp. : 351-359

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content