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MAIK Nauka/Interperiodica

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Erbium Segregation in Silicon Layers Grown by Molecular-Beam Epitaxy

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Structural perfection of heteroepitaxial silicon layers grown on sapphire by sublimation-source molecular beam epitaxy

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Inorganic Materials, Vol. 43, Iss. 4, 2007-04 ,pp. : 331-337

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Erbium and Germanium Profiles in Si_{1 – x}Ge_x Layers Grown by Silicon Sublimation-Source Molecular-Beam Epitaxy in GeH₄

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Crystallographic match in epitaxy between silicon and sapphire

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