Evolution of the Co–N/Ti/Si System in Magnetron Sputtering of Co onto a Heated Ti/Si(100) Substrate

By Vasiliev A. G.   Vasiliev A. L.   Zakharov R. A.   Orlikovsky A. A.   Horin I. A.   Eindou M.  

Russian Microelectronics, Vol. 33, Iss. 1, 2004-01 ,pp. : 1-6

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Phase Formation in Ti–Co–N/CoSi_x/Si(100) and Ti–Co–Si–N/CoSi_x/Si(100) Systems by Diffusion Reactions: The Role of Nitrogen

By Vasiliev A. G.   Vasiliev A. L.   Zakharov R. A.   Orlikovsky A. A.   Horin I. A.   Eindou M.  

Russian Microelectronics, Vol. 33, Iss. 3, 2004-05 ,pp. : 147-151

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Formation of C54 TiSi 2 in a cosputtered (Ti+Si) blanket film in the presence of a TiN capping layer

By Pelleg J.   Shor Y.  

Microelectronic Engineering, Vol. 69, Iss. 1, 2003-08 ,pp. : 65-80

Elsevier

Access to resources Recommend Favorite

Reliability studies of MOCVD TiSiN and EnCoRe Ta(N)/Ta

By Tokei Z.   Kelleher D.   Mebarki B.   Mandrekar T.   Guggilla S.   Maex K.  

Microelectronic Engineering, Vol. 70, Iss. 2, 2003-11 ,pp. : 358-362

Elsevier

Access to resources Recommend Favorite

Effects of post-annealing by the rapid thermal process on the characteristics of MOCVD-Cu/TiN/Si structures

By Kim Youn   Jun Chi-Hoon   Kim Dae  

Journal of Electronic Materials, Vol. 28, Iss. 4, 1999-04 ,pp. : 369-371

Springer Publishing Company

Access to resources Recommend Favorite