Point defect reactions in silicon studied in situ by high flux electron irradiation in high voltage transmission electron microscope

Author: Vanhellemont J.   Romano-Rodríguez A.   Fedina L.   Van Landuyt J.   Aseev A.  

Publisher: Maney Publishing

ISSN: 1743-2847

Source: Materials Science and Technology, Vol.11, Iss.11, 1995-11, pp. : 1194-1202

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