Disilane-based cyclic deposition/etch of Si, Si:P and Si_1−yC_y:P layers: I. The elementary process steps

Author： Hartmann J M Benevent V Barnes J P Veillerot M Deguet C

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.28, Iss.2, 2013-02, pp. : 25017-25026

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