Redistribution of P atoms in oxidized P-implanted silicon during annealing

Author: Yokota* Katsuhiro   Aoki Makoto   Nakamura Kazuhiro   Tannjou Masayasu   Sakai Shigeki   Sekine Kouhei   Watanabe Masanori  

Publisher: Springer Publishing Company

ISSN: 0957-4522

Source: Journal of Materials Science: Materials in Electronics, Vol.15, Iss.7, 2004-07, pp. : 455-461

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Abstract