The response of open-volume defects in Si0.92Ge0.08 to annealing in nitrogen or oxygen ambient

Author： Abdulmalik D.   Coleman P.   Su H.   Haddara Y.   Knights A.  

Publisher： Springer Publishing Company

ISSN： 0957-4522

Source： Journal of Materials Science: Materials in Electronics, Vol.18, Iss.7, 2007-07, pp. : 753-757

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