Random Telegraph Noise in 30 nm FETs with Conventional and High-κ Dielectrics

By Lee Angelica   Brown Andrew   Asenov Asen   Roy Scott  

Journal of Computational Electronics, Vol. 3, Iss. 3-4, 2004-10 ,pp. : 247-250

Springer Publishing Company

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Magnetoresistance in Tunnel Junctions Made of Epitaxially Grown Manganate Films with 1.6-nm-Thick Barriers

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Simulations of Sub-100 nm Strained Si MOSFETs with High-κ Gate Stacks

By Yang L.   Watling J.   Adamu-Lema F.   Asenov A.   Barker J.  

Journal of Computational Electronics, Vol. 3, Iss. 3-4, 2004-10 ,pp. : 171-175

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A Non-Parabolic Six Moments Model for the Simulation of Sub-100 nm Semiconductor Devices

By Grasser Tibor   Kosik Robert   Jungemann Christoph   Meinerzhagen Bernd   Kosina Hans   Selberherr Siegfried  

Journal of Computational Electronics, Vol. 3, Iss. 3-4, 2004-10 ,pp. : 183-187

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A simulation-based evolutionary technique for inverse doping profile problem of sub-65 nm CMOS devices

By Li Yiming   Chen Cheng-Kai  

Journal of Computational Electronics, Vol. 5, Iss. 4, 2006-12 ,pp. : 365-370

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