A Non Perturbative Model of Surface Roughness Scattering for Monte Carlo Simulation of Relaxed Silicon n-MOSFETs: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Boriçi M.   Watling J.R.   Wilkins R.   Yang L.   Barker J.R.  

Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 163-167

Springer Publishing Company

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Scattering from Body Thickness Fluctuations in Double Gate MOSFETs: An ab initio Monte Carlo Simulation Study

By Riddet C.   Brown A.   Alexander C.   Watling J.   Roy S.   Asenov A.  

Journal of Computational Electronics, Vol. 3, Iss. 3-4, 2004-10 ,pp. : 341-345

Springer Publishing Company

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Full Band Monte Carlo Study for Two-Dimensional Hole Transport in Strained Si p-MOSFETs: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

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Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 109-112

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Simulations of Sub-100 nm Strained Si MOSFETs with High-κ Gate Stacks

By Yang L.   Watling J.   Adamu-Lema F.   Asenov A.   Barker J.  

Journal of Computational Electronics, Vol. 3, Iss. 3-4, 2004-10 ,pp. : 171-175

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Scattering and space-charge effects in Wigner Monte Carlo simulations of single and double barrier devices

By Sverdlov Viktor   Grasser Tibor   Kosina Hans   Selberherr Siegfried  

Journal of Computational Electronics, Vol. 5, Iss. 4, 2006-12 ,pp. : 487-487

Springer Publishing Company

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