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Ferroelectrics, Vol. 381, Iss. 1, 2009-01 ,pp. : 30-40

Taylor & Francis Ltd

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Dry Etching Mechanisms of ZrO2 Thin Films in BCl3/Cl2/Ar Plasma

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Etching Characteristics of (Na0.5K0.5)NbO3 Thin Films in an Inductively Coupled Cl2/Ar Plasma

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Dry Etching Characteristics of ZrO2 Thin Films Using High Density Cl2/Ar Plasma

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INFLUENCE OF ETCHING THE TiC UNDERLAYER WITH CH4/AlCl3/H2 ON THE CVD FORMATION OF KAPPA-Al2O3

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