Author： Chernysh V. S. Kulikauskas V. S. Patrakeev A. S. Abdul-cader K. M. Shulga V. I.
Publisher： Taylor & Francis Ltd
ISSN： 1042-0150
Source： Radiation Effects and Defects in Solids, Vol.159, Iss.3, 2004-03, pp. : 149-155
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Access to resources
Recommend
Secondary ion emission from silicon under 8 keV O 2 + and Ar + ion bombardment
By Huan C.H.A. Wee A.T.S. Low H.S.M. Tan K.L.
Vacuum, Vol. 47, Iss. 2, 1996-02 ,pp. :
Anisotropic angular distribution of sputtered atoms
Radiation Effects and Defects in Solids, Vol. 159, Iss. 5, 2004-05 ,pp. :
Grazing irradiation of porous silicon by 500 keV He ions
By Manuaba A. Paszti F. Battistig G. Ortega C. Grosman A.
Vacuum, Vol. 50, Iss. 3, 1998-07 ,pp. :