Medium energy ion scattering analysis of the evolution and annealing of damage and associated dopant redistribution of ultra shallow implants in Si

Author： van den Berg J.A. Reading M. A. Armour D. G. Carter G. Zalm P. C. Bailey P. Noakes T. C. Q.

Publisher： Taylor & Francis Ltd

ISSN： 1042-0150

Source： Radiation Effects and Defects in Solids, Vol.164, Iss.7-8, 2009-07, pp. : 481-491

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Surface segregation and interdiffusion of Ge on Si(001) studied by medium-energy ion scattering

By Sumitomo K. Shiraishi K. Kobayashi Y. Ito

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 112-115

Elsevier

Access to resources Recommend Favorite

Formation of coherent Ge shallow dome islands on Si(001) by ultra-high-vacuum ion beam sputter deposition

By Chung Hung-Chin

Applied Physics A, Vol. 91, Iss. 2, 2008-05 ,pp. : 267-271

Springer Publishing Company

Access to resources Recommend Favorite

The loss of boron in ultra-shallow boron implanted Si under heavy ion irradiation

By Pelicon P. El Bouanani M. Ravi Prasad G. Razpet A. Simčič J. Guo B. Birt D. Duggan J. Mcdaniel F.

Radiation Effects and Defects in Solids, Vol. 161, Iss. 8, 2006-08 ,pp. : 487-494

Taylor & Francis Ltd

Access to resources Recommend Favorite

Analysis of the Outer Surface of Platinum-Gold Catalysts by Low-Energy Ion Scattering

By Brongersma Hidde H. Grehl Thomas Schofield Emma R. Smith Richard A. P. ter Veen Hendrik R. J.

Platinum Metals Review, Vol. 54, Iss. 2, 2010-04 ,pp. : 81-87

Johnson Matthey

Access to resources Recommend Favorite

A medium energy ion scattering study of metal-on-metal epitaxy and surfactant-mediated growth for the Au on Cu(111) system

By Noakes T.C.Q. Bailey P.

Thin Solid Films, Vol. 394, Iss. 1, 2001-08 ,pp. : 15-22

Elsevier

Access to resources Recommend Favorite