Growth of SiGe/Si multiple quantum wells by ultra-high-vacuum electron cyclotron resonance chemical vapor deposition

By Joo S.-J.   Yoon E.   Hwang S.-H.   Whang K.-W.   Chun S.K.   Dong Kim Y.  

Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 111-115

Elsevier

Access to resources Recommend Favorite

Structural disorder in SiGe films grown epitaxially on Si by ion beam sputter deposition

By Parnis D.   Zolotoyabko E.   Kaplan W.D.   Eizenberg M.   Mosleh N.   Meyer F.   Schwebel C.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 64-68

Elsevier

Access to resources Recommend Favorite

Photoluminescence of self-assembled Ge dots grown by ultra-high-vacuum chemical vapor deposition

By Boucaud P.   Le Thanh V.   Sauvage S.   Debarre D.   Bouchier D.   Lourtioz J.-M.  

Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 240-243

Elsevier

Access to resources Recommend Favorite

Formation of 'environmentally friendly' semiconductor ( -FeSi 2 ) thin films prepared by ion beam sputter deposition (IBSD) method

By Sasase M.   Nakanoya T.   Yamamoto H.   Hojou K.  

Thin Solid Films, Vol. 401, Iss. 1, 2001-12 ,pp. : 73-76

Elsevier

Access to resources Recommend Favorite

Mo/Si multilayers for EUV lithography by ion beam sputter deposition

By Chasse T.   Neumann H.   Ocker B.   Scherer M.   Frank W.   Frost F.   Hirsch D.   Schindler A.   Wagner G.   Lorenz M.   Otto G.   Zeuner M.   Rauschenbach B.  

Vacuum, Vol. 71, Iss. 3, 2003-05 ,pp. : 407-415

Elsevier

Access to resources Recommend Favorite