A two-dimensional fully analytical model with polarization effect for off-state channel potential and electric field distributions of GaN-based field-plated high electron mobility transistor

Author： Wei Mao   Wei-Bo She   Cui Yang   Chao Zhang   Jin-Cheng Zhang   Xiao-Hua Ma   Jin-Feng Zhang   Hong-Xia Liu   Lin-An Yang   Kai Zhang   Sheng-Lei Zhao   Yong-He Chen   Xue-Feng Zheng   Yue Hao  

Publisher： IOP Publishing

ISSN： 1674-1056

Source： Chinese Physics B, Vol.23, Iss.8, 2014-08, pp. : 87305-87312

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