Substitutional incorporation of Sn in compressively strained thin films of heavily-alloyed Ge1 − xSn x /Ge semiconductor probed by x-ray absorption and diffraction methods

Author： Soo Y L   Wu T S   Chen Y C   Shiu Y F   Peng H J   Tsai Y W   Liao P Y   Zheng Y Z   Chang S L   Chan T S   Lee J F   Sterbinsky G E   Li H   Cheng H H  

Publisher： IOP Publishing

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.29, Iss.11, 2014-11, pp. : 115008-115013

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