Laser excitation induced photoluminescence linewidth reduction in molecular beam epitaxial InAlAs layers grown on InP substrates

By Yoon S.F.   Radhakrishnan K.   Du Q.H.  

Superlattices and Microstructures, Vol. 23, Iss. 2, 1998-02 ,pp. : 503-512

Academic Press

Access to resources Recommend Favorite

Extension of the temperature range of epitaxial YSZ film growth on Si(100) during magnetron sputtering

By Beshenkov V.   Znamenskii A.   Marchenko V.   Pustovit A.   Chernykh A.  

Technical Physics, Vol. 52, Iss. 5, 2007-05 ,pp. : 636-641

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Structural defects in 6H-SiC substrates and their effect on the sublimation growth of epitaxial layers in vacuum

By Sorokin L.   Tregubova A.   Shcheglov M.   Lebedev A.   Savkina N.  

Physics of the Solid State, Vol. 42, Iss. 8, 2000-08 ,pp. : 1422-1426

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Growth and characterisation of thin MgO layers on Si(100) surfaces

By  

Journal of Physics: Conference Series , Vol. 100, Iss. 4, 2008-03 ,pp. : 190-193

IOP Publishing

Access to resources Recommend Favorite

Electron diffraction on GaAs nanowhiskers grown on Si(100) and Si(111) substrates by molecular-beam epitaxy

By Soshnikov I.   Cirlin G.   Tonkikh A.   Nevedomski V.   Samsonenko Yu.   Ustinov V.  

Physics of the Solid State, Vol. 49, Iss. 8, 2007-08 ,pp. : 1440-1445

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite