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Taylor & Francis Ltd

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Dry Etching of TaN Thin Films by Using an Inductively Coupled Plasma

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Deposition of SiO2 in a SiH4/O2 inductively coupled plasma

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IOP Publishing

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Etching Characteristics of (Na0.5K0.5)NbO3 Thin Films in an Inductively Coupled Cl2/Ar Plasma

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Effect of light irradiation from inductively coupled Ar plasma on etching yields of SiO2 film by CF3 ion beam injections

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