Low temperature atomic layer deposited HfO₂ film for high performance charge trapping flash memory application

By Chen Guoxing   Huo Zongliang   Jin Lei   Zhang Dong   Zhao Shengjie   Han Yulong   Liu Su   Liu Ming  

Semiconductor Science and Technology, Vol. 29, Iss. 4, 2014-04 ,pp. : 45019-45023

IOP Publishing

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Silicon passivation and tunneling contact formation by atomic layer deposited Al₂O₃/ZnO stacks

By Garcia-Alonso D   Smit S   Bordihn S   Kessels W M M  

Semiconductor Science and Technology, Vol. 28, Iss. 8, 2013-08 ,pp. : 82002-82005

IOP Publishing

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Influence of atomic layer deposition Al₂O₃ nano-layer on the surface passivation of silicon solar cells

By Decheng Yang   Fang Lang   Zhuo Xu   Jinchao Shi   Gaofei Li   Zhiyan Hu   Jingfeng Xiong  

Journal of Semiconductors, Vol. 35, Iss. 5, 2014-05 ,pp. : 52002-52006

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Electrical properties of GaN-based metal–insulator–semiconductor structures with Al₂O₃ deposited by atomic layer deposition using water and ozone as the oxygen precursors

By Kubo Toshiharu   Freedsman Joseph J   Iwata Yasuhiro   Egawa Takashi  

Semiconductor Science and Technology, Vol. 29, Iss. 4, 2014-04 ,pp. : 45004-45009

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Effects of the Al₂O₃ interlayer in ZnO thin-film transistors fabricated via atomic layer deposition

By Kim Seong-Hyeon   Jeong Kwang-Seok   Lee Ga-Won   Lee Hi-Deok  

Journal of Information Display, Vol. 14, Iss. 2, 2013-06 ,pp. : 61-65

Taylor & Francis Ltd

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