Electrical properties of GaN-based metal–insulator–semiconductor structures with Al2O3 deposited by atomic layer deposition using water and ozone as the oxygen precursors

Author： Kubo Toshiharu   Freedsman Joseph J   Iwata Yasuhiro   Egawa Takashi  

Publisher： IOP Publishing

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.29, Iss.4, 2014-04, pp. : 45004-45009

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