A simple model for extraction of interface state density of a Schottky barrier diode using reverse bias C-V plots

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International Journal of Electronics, Vol. 87, Iss. 2, 2000-02 ,pp. : 153-161

Taylor & Francis Ltd

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Re-examination of the extraction of MOS interface-state density by C–V stretchout and conductance methods

By Chen Han-Ping   Yuan Yu   Yu Bo   Chang Chih-Sheng   Wann Clement   Taur Yuan  

Semiconductor Science and Technology, Vol. 28, Iss. 8, 2013-08 ,pp. : 85008-85012

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Electrical and physico-chemical characterization of HfO 2 /SiO 2 gate oxide stacks prepared by atomic layer deposition

By Damlencourt J.-F.   Renault O.   Samour D.   Papon A.-M.   Leroux C.   Martin F.   Marthon S.   Semeria M.-N.   Garros X.  

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Impact of interface traps on gate-induced drain leakage current in n -type metal oxide semiconductor field effect transistor

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International Journal of Electronics, Vol. 92, Iss. 9, 2005-09 ,pp. : 539-552

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The effect of series resistance on calculation of the interface state density distribution in Schottky diodes

By Ayyildiz E   Temirci C.   Bati B.   Türüt A.  

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