Ternary and quaternary Ni(Si)Ge(Sn) contact formation for highly strained Ge p- and n-MOSFETs

Author： Wirths S   Troitsch R   Mussler G   Hartmann J-M   Zaumseil P   Schroeder T   Mantl S   Buca D  

Publisher： IOP Publishing

E-ISSN： 1361-6641|30|5|55003-55010

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.30, Iss.5, 2015-05, pp. : 55003-55010

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