Anomalous Channel Length Dependence of Hot-Carrier-Induced Saturation Drain Current Degradation in n-Type MOSFETs

Publisher： IOP Publishing

E-ISSN： 1741-3540|32|8|88502-88504

ISSN： 0256-307X

Source： Chinese Physics Letters, Vol.32, Iss.8, 2015-01, pp. : 88502-88504

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