BORON DIFFUSION PROPERTIES AND ELECTRICAL CHARACTERISTICS OF p + Poly-Si 0.73 Ge 0.27 /AlN x /Al 2 O 3 /AlN x /n-Si (100) USING IN-SITU ALD

By LEE CHIHOON   HWANG CHEOL   KIM HYEONG  

Integrated Ferroelectrics, Vol. 74, Iss. 1, 2005-09 ,pp. : 79-85

Taylor & Francis Ltd

Access to resources Recommend Favorite

Micromachining of AlN and Al₂O₃ Using Fiber Laser

By Preusch Florian   Adelmann Benedikt   Hellmann Ralf  

Micromachines, Vol. 5, Iss. 4, 2014-11 ,pp. : 1051-1060

MDPI

Access to resources Recommend Favorite

Impact of SiO₂ on Al–Al thermocompression wafer bonding

By Malik Nishant   Schjølberg-Henriksen Kari   Poppe Erik U   Taklo Maaike M V   Finstad Terje G  

Journal of Micromechanics and Microengineering, Vol. 25, Iss. 3, 2015-03 ,pp. : 35025-35033

IOP Publishing

Access to resources Recommend Favorite

Surface acoustic wave devices on AlN/3C–SiC/Si multilayer structures

By Lin Chih-Ming   Chen Yung-Yu   Felmetsger Valery V   Lien Wei-Cheng   Riekkinen Tommi   Senesky Debbie G   Pisano Albert P  

Journal of Micromechanics and Microengineering, Vol. 23, Iss. 2, 2013-02 ,pp. : 25019-25026

IOP Publishing

Access to resources Recommend Favorite

Self-organization of dislocation-free, high-density, vertically aligned GaN nanocolumns involving InGaN quantum wells on graphene/SiO2 covered with a thin AlN buffer layer

By Hayashi Hiroaki   Konno Yuta   Kishino Katsumi  

Nanotechnology, Vol. 27, Iss. 5, 2016-02 ,pp. : 55302-55308

IOP Publishing

Access to resources Recommend Favorite