Growth of GaN Layers on Sapphire by Low‐Temperature‐Deposited Buffer Layers and Realization of p‐type GaN by Magesium Doping and Electron Beam Irradiation (Nobel Lecture)

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ANGEWANDTE CHEMIE INTERNATIONAL EDITION, Vol. 54, Iss. 27, 2015-06 ,pp. : 7764-7769

John Wiley & Sons Inc

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Growth of GaN on sapphire via low‐temperature deposited buffer layer and realization of p‐type GaN by Mg doping followed by low‐energy electron beam irradiation (Nobel Lecture)

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John Wiley & Sons Inc

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GaN substrates for molecular beam epitaxy growth of homoepitaxial structures

By Grzegory I.   Porowski S.  

Thin Solid Films, Vol. 367, Iss. 1, 2000-05 ,pp. : 281-289

Elsevier

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Growth of GaN epitaxial layers on sapphire with preheated ammonia and their structural and optoelectronic properties

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Current Applied Physics, Vol. 3, Iss. 4, 2003-06 ,pp. : 351-354

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Growth defects in GaN layers on top of (0001) sapphire: a geometrical investigation of the misfit effect

By Ruterana P.   Potin V.   Barbaray B.   Nouet G.  

Philosophical Magazine. A. Physics of Condensed Matter. Defects and Mechanical Properties, Vol. 80, Iss. 4, 2000-04 ,pp. : 937-954

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