Reply to ‘Comment on “A compact drain current model of short-channel cylindrical gate-all-around MOSFETs”’

Author： Tsormpatzoglou A Tassis D H Dimitriadis C A

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.29, Iss.3, 2014-03, pp. : 38002-38002

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