Related content

Reply to ‘Comment on “A compact drain current model of short-channel cylindrical gate-all-around MOSFETs”’

By Tsormpatzoglou A   Tassis D H   Dimitriadis C A  

Semiconductor Science and Technology, Vol. 29, Iss. 3, 2014-03 ,pp. : 38002-38002

IOP Publishing

Access to resources Recommend Favorite

An analytical drain current model of short-channel MOSFETs including source/drain resistance effect

By Ho C. S.  

International Journal of Electronics, Vol. 93, Iss. 3, 2006-03 ,pp. : 137-148

Taylor & Francis Ltd

Access to resources Recommend Favorite

Analytical model for subthreshold current and subthreshold swing of short-channel double-material-gate MOSFETs with strained-silicon channel on silicon—germanium substrates

By Dubey Sarvesh        

Journal of Semiconductors, Vol. 35, Iss. 10, 2014-10 ,pp. : 104002-104008

IOP Publishing

Access to resources Recommend Favorite

Double-gate junctionless transistor model including short-channel effects

By Paz B C   Ávila-Herrera F   Cerdeira A   Pavanello M A  

Semiconductor Science and Technology, Vol. 30, Iss. 5, 2015-05 ,pp. : 55011-55021

IOP Publishing

Access to resources Recommend Favorite

Effect of Ga fraction in InGaAs channel on performances of gate-all-around tunneling field-effect transistor

By  

Semiconductor Science and Technology, Vol. 30, Iss. 1, 2015-01 ,pp. : 15006-15011

IOP Publishing

Access to resources Recommend Favorite