Related content

Quantum Hall conductance of graphene combined with charge-trap memory operation

By  

Nanotechnology, Vol. 26, Iss. 34, 2015-01 ,pp. : 345202-345207

IOP Publishing

Access to resources Recommend Favorite

FERROELECTRIC CHARGE TRANSFER DEVICE USING POLARIZATION-ASSISTED TUNNELING FOR SINGLE TRANSISTOR NONVOLATILE MEMORIES

By DALTON D.   GNADINGER F.   KLINGENSMITH D.   OLARIU V.   KALKUR T.   RAHMAN M.   MAHMUD A.  

Integrated Ferroelectrics, Vol. 81, Iss. 1, 2006-11 ,pp. : 187-196

Taylor & Francis Ltd

Access to resources Recommend Favorite

Characteristics of Junctionless Charge Trap Flash Memory for 3D Stacked NAND Flash

By Oh Jinho   Na Heedo   Park Sunghoon   Sohn Hyunchul  

Journal of Nanoscience and Nanotechnology, Vol. 13, Iss. 9, 2013-09 ,pp. : 6413-6415

American Scientific Publishers

Access to resources Recommend Favorite

Comparative Study of Charge Trapping Type SOI-FinFET Flash Memories with Different Blocking Layer Materials ^†

By Liu Yongxun   Nabatame Toshihide   Matsukawa Takashi   Endo Kazuhiko   O’uchi Shinichi   Tsukada Junichi   Yamauchi Hiromi   Ishikawa Yuki   Mizubayashi Wataru   Morita Yukinori   Migita Shinji   Ota Hiroyuki   Chikyow Toyohiro   Masahara Meishoku  

Journal of Low Power Electronics and Applications, Vol. 4, Iss. 2, 2014-06 ,pp. : 153-167

MDPI

Access to resources Recommend Favorite

Single layer graphene electrodes for quantum dot-light emitting diodes

By  

Nanotechnology, Vol. 26, Iss. 13, 2015-03 ,pp. : 135201-135206

IOP Publishing

Access to resources Recommend Favorite