Suppression of Inhibit Cell V th Disturbance in Three Dimensional Stack NAND Flash Memory

By Choe Byeong-In   Park Byung-Gook   Lee Jung-Kyu   Lee Jong-Ho  

Journal of Nanoscience and Nanotechnology, Vol. 13, Iss. 9, 2013-09 ,pp. : 6382-6388

American Scientific Publishers

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Effect of Adjacent Bit-Line Cell Interference on Low Frequency Noise in NAND Flash Memory Cell Strings

By Jo Bong-Su   Joe Sung-Min   Jeong Min-Kyu   Han Kyung-Rok   Park Sung-Kye   Lee Jong-Ho  

Journal of Nanoscience and Nanotechnology, Vol. 13, Iss. 9, 2013-09 ,pp. : 6405-6408

American Scientific Publishers

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Graphene-quantum-dot nonvolatile charge-trap flash memories

By   Kim Jungkil     Kim Sung   Choi Suk-Ho    

Nanotechnology, Vol. 25, Iss. 25, 2014-06 ,pp. : 255203-255208

IOP Publishing

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Degradation Mechanisms of the Program Characteristics of 10 nm NAND Flash Memories Due to Cell-to-Cell Interference

By Ryu Ju Tae   Kim Tae Whan  

Journal of Nanoscience and Nanotechnology, Vol. 13, Iss. 9, 2013-09 ,pp. : 6420-6423

American Scientific Publishers

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Application of a hexahedral mesh compression method in a 3D hot forging process for efficient analysis of a flash

By Hong J.T.   Lee Y.K.   Lee S.R.   Yang D.Y.  

Engineering Computations: Int J for Computer-Aided Engineering, Vol. 22, Iss. 2, 2005-02 ,pp. : 165-185

Emerald Group Publishing Ltd

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