Related content

Selective Growth of CdTe on Si(211): First-Principle Calculations

By Huang Y.   Chen X.S.  

Journal of Electronic Materials, Vol. 36, Iss. 8, 2007-08 ,pp. : 925-930

Springer Publishing Company

Access to resources Recommend Favorite

First-principles calculation on the concentration of intrinsic defects in 4H-SiC

By Ping Cheng   Yuming Zhang   Yimen Zhang  

Journal of Semiconductors, Vol. 34, Iss. 1, 2013-01 ,pp. : 13002-13005

IOP Publishing

Access to resources Recommend Favorite

Charge trapping in SiO2/HfO2/TiN gate stack

By Lime F.   Ghibaudo G.   Guillaumot B.  

Microelectronics Reliability, Vol. 43, Iss. 9, 2003-09 ,pp. : 1445-1448

Elsevier

Access to resources Recommend Favorite

Coupling of carriers injection and charges distribution in Schottky barrier charge-trapping memories using source-side electrons programming

By Luo Yan-Xiang   Shih Chun-Hsing  

Semiconductor Science and Technology, Vol. 29, Iss. 11, 2014-11 ,pp. : 115006-115013

IOP Publishing

Access to resources Recommend Favorite

Direct bonding of Si wafer pairs with SiO 2 and Si 3 N 4 films with a fast linear annealing

By Lee S.H.   Song O.   Yoon C.S.   Kim C.K.  

Materials Science in Semiconductor Processing, Vol. 5, Iss. 6, 2002-12 ,pp. : 519-524

Elsevier

Access to resources Recommend Favorite