The residual electrically active damage in low energy boron implanted silicon: rapid thermal annealing and implant mass effects*

Author： Kaabi L.   Ben Brahim J.   Remaki B.   Gontrand C.   El Omari H.   Bureau J.-C.   Sassi Z.   Balland B.  

Publisher： Edp Sciences

E-ISSN： 1286-0050|3|1|49-52

ISSN： 1286-0042

Source： EPJ Applied Physics (The), Vol.3, Iss.1, 2010-03, pp. : 49-52

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