

Author: Hamdouni A. Ben Sedrine N. Harmand J. C. Chtourou R.
Publisher: Edp Sciences
E-ISSN: 1286-0050|38|3|221-225
ISSN: 1286-0042
Source: EPJ Applied Physics (The), Vol.38, Iss.3, 2007-06, pp. : 221-225
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content


By Kunert H. W. Dale D. Prinsloo L. C. Hayes M. Barnas J. Malherbe J. B. Brink D. J. Machatine A. I. Haile K. M.
EPJ Applied Physics (The), Vol. 27, Iss. 1-3, 2010-03 ,pp. :




Growth and properties of Dy-doped GaN nanowires
By Cao Y. P. Shi F. Sun H. B. Liu W. J. Guo Y. F. Xue C. S.
EPJ Applied Physics (The), Vol. 50, Iss. 1, 2010-04 ,pp. :




Analysis of GaN cap layer effecting on critical voltage for electrical degradation of AlGaN/GaN HEMT
By Qu Shenqi Wang Xiaoliang Xiao Hongling Wang Cuimei Jiang Lijuan Feng Chun Chen Hong Yin Haibo Yan Junda Peng Enchao Kang He Wang Zhanguo Hou Xun
EPJ Applied Physics (The), Vol. 68, Iss. 1, 2014-10 ,pp. :