Redistribution of nitrogen localized states in GaAsN layer doped Silicon

Author: Hamdouni A.   Ben Sedrine N.   Harmand J. C.   Chtourou R.  

Publisher: Edp Sciences

E-ISSN: 1286-0050|38|3|221-225

ISSN: 1286-0042

Source: EPJ Applied Physics (The), Vol.38, Iss.3, 2007-06, pp. : 221-225

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