Ionizing irradiation effect on the current-voltage characteristics of the metal/ultra-thin oxide/semiconductor structures

By Kassmi K.   Maimouni R.   Sarrabayrouse G.  

EPJ Applied Physics (The), Vol. 8, Iss. 2, 2010-03 ,pp. : 171-178

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Fowler-Nordheim current modeling of metal/ultra-thin oxide/semiconductor structures in the inversion mode, defects characterization*

By Khlifi Y.   Kassmi K.   Aziz A.   Olivie F.  

EPJ Applied Physics (The), Vol. 28, Iss. 1, 2004-06 ,pp. : 27-41

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Instability analysis of charges trapped in the oxide of metal-ultra thin oxide-semiconductor structures

By Aziz A.   Kassmi K.   Maimouni R.   Olivié F.   Sarrabayrouse G.   Martinez A.  

EPJ Applied Physics (The), Vol. 31, Iss. 3, 2005-09 ,pp. : 169-178

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Determination of bulk and interface density of states in metal oxide semiconductor thin-film transistors by using capacitance–voltage characteristics

By Wei Xixiong   Deng Wanling   Fang Jielin   Ma Xiaoyu   Huang Junkai  

EPJ Applied Physics (The), Vol. 80, Iss. 1, 2017-10 ,pp. : 10103-10103

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Extracting parameters from the current-voltage characteristics of polycrystalline octithiophene thin film field-effect transistors

By Bourguiga R.   Mahdouani M.   Mansouri S.   Horowitz G.  

EPJ Applied Physics (The), Vol. 39, Iss. 1, 2007-06 ,pp. : 7-16

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