![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
Author: Gong Huiling Wang Xiaohui Tian Zhibin Zhang Hui Li Longtu
Publisher: Springer Publishing Company
ISSN: 1738-8090
Source: Electronic Materials Letters, Vol.10, Iss.2, 2014-03, pp. : 417-421
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
Electron transport through broken down ultra-thin SiO 2 layers in MOS devices
Microelectronics Reliability, Vol. 44, Iss. 1, 2004-01 ,pp. :
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
By Tingting Chen Bing Liu Xiujian Chou Jun Liu Chenyang Xue Wendong Zhang
Journal of Semiconductors, Vol. 35, Iss. 3, 2014-03 ,pp. :
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
Influence of buffer layer on dielectric properties of (Ba 1-x Sr x )TiO 3 thin films
Microelectronic Engineering, Vol. 66, Iss. 1, 2003-04 ,pp. :