The effects of ambient oxygen pressure on the 1.54 μm photoluminescence of Er-doped silicon-rich silicon oxide films grown by laser ablation of a Si+Er target

Author： Ha J.S.   Sung G.Y.   Lee S.   Jang Y.R.   Yoo K.H.   Bae C.H.   Jeon J.S.   Nam S.H.   Park S.M.  

Publisher： Springer Publishing Company

ISSN： 0947-8396

Source： Applied Physics A, Vol.79, Iss.4-6, 2004-09, pp. : 1485-1488

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